Power GaN Devices Market Industry Size, Share, Trends, Analysis And Forecast 2021-2031

Transparency Market Research delivers key insights on the global power GaN devices market. In terms of revenue, the global power GaN devices market is estimated to expand at a CAGR of 40.3% during the forecast period, owing to numerous factors, regarding which TMR offers thorough insights and forecasts in its report on the global power GaN devices market.

The global power GaN devices market is broadly affected by several factors, including rise in demand for GaN-based high electron mobility transistors (HEMTs) for applications in power devices and radio frequency (RF) power amplifiers due to their superior material characteristics as compared to that of silicon (Si)-based materials.

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Power GaN Devices Market: Dynamics

The power electronics industry has witnessed the theoretical limit reached by silicon MOSFETs and needs to move to a new element. GaN (Gallium Nitride) on diamond is an alternative material to pure GaN in the field of high power semiconductors and power electronics.

Gallium nitride is a kind of wide-gap compound semiconductor that has a high crystalline, good uniformity, and superior surface quality. GaN on diamond semiconductor substrate offers key parameters such as high thermal conductivity, high electrical resistivity, and three times smaller devices at both device and system level. These advantages make GaN on diamond power electronics devices highly attractive for fast charging, inverters, power modules, drive trains, and other energy conversation devices.

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The power GaN devices market in Asia Pacific is projected to expand further due to significant rise in the demand for power electronics and wireless infrastructure devices. The Asia Pacific market is estimated to reach the value of US$ 1,049.03 Mn by 2031. The power GaN devices market in Asia Pacific is likely to expand at a notable CAGR of 43.3% during the forecast period, owing to the presence of a significant number of players manufacturing GaN power devices in the region.

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Power GaN Devices Market: Key Players

Key players operating in the global power GaN devices market are Efficient Power Conversion Corporation, Inc., Fujitsu limited, GaN Power Inc., GaN systems, Infineon Technologies, Navitas Semiconductor, On Semiconductors, Panasonic Corporation, and VisIC Technologies.

Increasing Demand for Fast Switching Devices: Key Driver of Global Power GaN Devices Market


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GaN devices are being widely used in chargers for the past few years, owing to increasing adoption of GaN devices in consumer electronics and industrial power supply. Various GaN-based chargers are available, which offer smaller size, higher speed, and higher energy-efficiency than traditional silicon-based chargers. Thus, numerous OEMs producing laptops, PCs, and smartphone manufacturers have also started to offer GaN-based chargers, along with the product owing to the need and higher demand from the consumer side.

Additionally, industrial power supplies using silicon solution achieve an efficiency in power converters of below 95%, while GaN solution boosts the efficiency up to 99%, which is a huge power conservation as per industry usage. Furthermore, increased frequency, increased power density, bi-directional power flow, and reduced component count also drive the demand for industrial power supplies using GaN technology.


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